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The Hitachi, Ltd. patent solves the following problem:
The invention relates to a method to establish good standards, use a mask for the projection and an electron beam, and a method for fabricating a semiconductor device, using the same also.
Our analysis of this patent is as follows:
Hitachi, Ltd.’s patent US 6845497 B2 deals with Method for fabrication of patterns and semiconductor devices.
Exposure standards are divided into divided regions taking into consideration a broad impact on a backscattering, the Coulomb effect, and process factors, respectively, in the wrong dimensions, and a sample the occupancy ratio (standard density) in respective divided regions retained, thus executing exposure standards after finding measure the pattern changes as a function of the respective pattern densities. As a result, it will be possible to fabricate a mask given to correct the flaws in the measure, because the plurality of factors such as backscattering, the Coulomb effect, and the process considerably, and to obtain very accurate standards for exposure. Furthermore, using the pattern area density map capable of data processing time required for the correction was reduced.
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